报告题目:Light Induced Quasi-Fermi Level Splitting in Molecular Semiconductor Alloys
报告人:Dinesh Kabra 副教授
邀请人:王建浦 教授
报告时间:11月26日(星期二)9:30
报告地点:科技创新大楼C501
Abstract
Quasi-Fermi-level (QFL) splitting is a direct measure of the open-circuit voltage (VOC) in an optically illuminated semiconductor solar cell (SC). The evolution of quasi Fermi level splitting under 1 sun illumination in ternary blends of Gaussian disordered (GD) excitonic molecular semiconductors (MSs) is a complex process. Our analytical model based on population occupancy in GD systems describes the change in QFL as a function of alloy composition in ternary (two n-type and one p-type) MSs. Unprecedented, our model could predict a remarkable quantitative change in the QFL of light induced holes in such alloys. This analytical model, combined with temperature dependent mobility studies, also reveals that a suitable n-type environment can reduce the polaronic disorder (Ea) for holes. Furthermore, Ea values are correlated with the recombination dynamics of photoinduced carriers.