主讲人：Prof. Saurabh Sinha (South Africa)

时间：2018年12月7日（周五）

地点：机械B楼308室能源学院报告厅（50人）

主讲人介绍：Prof. Saurabh Sinha obtained his Ph.D. degree in Electronic Engineering from the University of Pretoria (UP). As a published researcher, he has authored or co-authored over 110 publications in peer-reviewed journals, books and at international conferences. Prof. Sinha served for over a decade and his last service is Director of the Carl and Emily Fuchs Institute for Microelectronics, Department of Electrical, Electronic and Computer Engineering. He also held other leading positions before, such as: the Executive Dean of the Faculty of Engineering and the Built Environment (FEBE) at the University of Johannesburg (UJ) (2013), the UJ Deputy Vice-Chancellor: Research and Internationalization (2017), and so on. Prof. Sinha also served the IEEE as a Board of Director and IEEE Vice-President: Educational Activities.

主要内容：The global semiconductor industry is dominated by silicon and silicon germanium (SiGe) process technologies. The introduction of germanium into the base layer of a conventional silicon bipolar transistor improves the operating frequency, linearity, 1/f noise, early voltage and power capabilities. This means that key advantages of state-of-the-art silicon processing can be retained and at the same time the improved fundamental transistor-level parameters provides the prospect of integration in the mm-wave domain. In the era of the Fourth Industrial Revolution, the demand for ubiquitous high-speed and high volume communication continues to increase. This growth must be matched by increasing the wireless bandwidth, but simultaneously attaining power efficiency and low cost. The lecture will seek to engineer the mm-wave wireless communications space using a SiGe technology node and some results from recent prototyping will be presented.

主办单位：能源科学与工程学院